FQP6N60C
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP6N60C
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole P-Channel number of channels:1 125 W 600 V Continuous Drain Current (ID):5.5 A 16 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Number of Elements | 1 |
| Current Rating | 5.5 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 125 W |
| Power Dissipation | 125 W |
| Number of Channels | 1 |
| Input capacitance | 810 pF |
| Continuous Drain Current (ID) | 5.5 A |
| Rds On Max | 2 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 45 ns |
| Rise Time | 45 ns |
| Gate Charge | 16 nC |
| Drain to Source Resistance | 2 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
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